RQ3E120ATTB
Manufacturer:
Rohm Semiconductor
Mfr.Part #:
RQ3E120ATTB
Datasheet:
Description:
MOSFETs HSMT8 SMD/SMT P-Channel number of channels:1 2 W Continuous Drain Current (ID):12 A 62 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 2 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 12 A |
| FET Type(Transistor Polarity) | P-Channel |
| Gate Charge | 62 nC |
| Drain to Source Resistance | 61 MΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Gate to Source Threshold Voltage | 2.5 V |
Stock: 3736
Distributors
pcbx
pcbxUnit Price$0.71985
Ext.Price$0.71985
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.71985 | $0.71985 |
| 10 | $0.45140 | $4.51400 |
| 25 | $0.39246 | $9.81150 |
| 50 | $0.34121 | $17.06050 |
| 100 | $0.29666 | $29.66600 |
| 300 | $0.26119 | $78.35700 |
| 500 | $0.22997 | $114.98500 |
| 1000 | $0.20860 | $208.60000 |
| 3000 | $0.17868 | $536.04000 |
| 5000 | $0.16414 | $820.70000 |